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Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm For stroboscope 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.15 +0.15 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 40 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 7 V 1 Emitter 1 2 3 Peak collector current ICP 8 A 2 Collector 2.54 0.15 3 Base Collector current IC 5 A TO 92NL Package Collector power dissipation PC 1 W Junction temperature Tj 150 C Storage temperature Tstg 55 +150 C Electrical Characteristics (Ta=25 C) Parameter Symbol Conditions min typ m... See More ⇒

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