View 2sd1938 detailed specification:
Transistors 2SD1938(F) Silicon NPN epitaxial planar type For low-voltage output amplification Unit mm 0.40+0.10 0.05 For muting 0.16+0.10 0.06 3 For DC-DC converter Features Low ON resistance Ron 1 2 High forward current transfer ratio hFE (0.95) (0.95) Mini type package, allowing downsizing of the equipment and 1.9 0.1 2.90+0.20 automatic insertion through the tape packing 0.05 10 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit 1 Base 2 Emitter Collector-base voltage (Emitter open) VCBO 50 V 3 Collector Collector-emitter voltage (Base open) VCEO 20 V EIAJ SC-59 JEDEC SOT-346 Emitter-base voltage (Collector open) VEBO 25 V Mini3-G1 Package Collector current IC 300 mA Marking symbol 3W Peak collector current ICP 500 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 C Storag... See More ⇒
Keywords - ALL TRANSISTORS SPECS
2sd1938.pdf Design, MOSFET, Power
2sd1938.pdf RoHS Compliant, Service, Triacs, Semiconductor
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