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View 2sd2216j e detailed specification:

Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1462J 1.60 0.05 0.80 0.80 0.05 0.425 0.425 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. +0.05 0.85 0.03 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V 1 Base 2 Emitter EIAJ SC 81 Collector current IC 100 mA 3 Collector SS Mini Flat Type Package (J type) Peak collector current ICP 200 mA Collector power dissipation PC 125 mW Marking symbol Y Junction temperature Tj 125 C Storage temperature Tstg 55 +125 C Electrical Characteristics (Ta=25 ... See More ⇒

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