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View 2sd2479 detailed specification:

Power Transistors 2SD2479 Silicon NPN epitaxial planar type Unit mm For low-frequency amplification 7.5 0.2 4.5 0.2 Features High forward current transfer ratio hFE 0.65 0.1 0.85 0.1 Allowing supply with the radial taping 0.8 C 0.8 C 1.0 0.1 0.7 0.1 0.7 0.1 1.15 0.2 Absolute Maximum Ratings Ta = 25 C 1.15 0.2 Parameter Symbol Rating Unit 0.5 0.1 0.4 0.1 Collector-base voltage (Emitter open) VCBO 120 V Collector-emitter voltage (Base open) VCEO 100 V 0.8 C 1 2 3 Emitter-base voltage (Collector open) VEBO 5 V 1 Emitter 2 Collector Collector current IC 2 A 2.5 0.2 2.5 0.2 3 Base Peak collector current ICP 3 A MT-3-A1 Package Collector power dissipation PC 1.5 W Internal Connection Junction temperature Tj 150 C C Storage temperature Tstg -55 to +150 C B E 200 Electrical Characteristics Ta = 25 C 3 ... See More ⇒

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