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Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit mm 4.6 0.2 10.5 0.3 1.4 0.1 For PDP/For high-speed switching Features Low on-resistance, low Qg 1.4 0.1 High avalanche resistance 2.5 0.2 0.8 0.1 2.54 0.3 0 to 0.3 Absolute Maximum Ratings TC = 25 C (10.2) Parameter Symbol Rating Unit (8.9) Drain-source surrender voltage VDSS 230 V 1 2 3 Gate-source surrender voltage VGSS 30 V ID 30 A Drain current 1 Gate Peak drain current IDP 120 A 2 Drain PD 50 W 3 Source Power TO-220C-G1 Package dissipation Ta = 25 C3 Channel temperature Tch 150 C Internal Connection Storage temperature Tstg -55 to +150 C D G S Electrical Characteristics TC = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Gate-drain surrender voltage VDSS ID = 1 mA, VGS = 0 230 V Diode forward voltage VDSF IDR = 30 A, VGS = 0 -1.5 V... See More ⇒

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