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DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification 1995 Apr 25 NXP Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b source admittance to input capacitance ratio 2 d drain Low noise gain controlled amplifier up to 1 GHz 3g2 gate 2 Superior cross-modulation performance during AGC. 4g1 gate 1 APPLICATIONS d handbook, halfpage VHF and UHF applications such as television tuners and professional communications equipment. 3 4 DESCRIPTION g2 Enhancement type field-effect transistor in a plastic g1 microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias c... See More ⇒

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