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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification 2000 Apr 11 Supersedes data of 1999 Jul 01 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FETs BF1102; BF1102R FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single DESCRIPTION package PIN BF1102 BF1102R Specially designed for 5 V applications 1 gate 1 (1) gate 1 (1) Superior cross-modulation performance during AGC 2 gate 2 (1 and 2) source (1 and 2) High forward transfer admittance 3 drain (1) drain (1) High forward transfer admittance to input capacitance 4 drain (2) drain (2) ratio. 5 source (1 and 2) gate 2 (1 and 2) 6 gate 1 (2) gate 1 (2) APPLICATIONS Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and prof... See More ⇒

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