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View irf530n 1 detailed specification:

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF530N FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 17 A g RDS(ON) 110 m s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel enhancement mode PIN DESCRIPTION tab field-effect power transistor in a drain plastic envelope using trench 1 gate technology. 2 drain Applications - d.c. to d.c. converters 3 source switched mode power supplies 1 2 3 gate source tab drain drain The IRF530N is supplied in the SOT78 (TO220AB) conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source voltage Tj = 25 C to 175 C - 100 V VDGR Drain... See More ⇒

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