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MMBTSC1623 NPN Transistor Features SOT-23 High DC Current gain. High voltage 1.Base 2.Emitter 3.Collector Marking Code L4 L4. L5 L5. L6 L6. L7 L7. Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBO Collector Emitter Voltage V 50 V CEO Emitter Base Voltage V 5 V EBO Collector Current I 100 mA C Power Dissipation P 200 mW D Junction Temperature T 150 J Storage Temperature Range T -55 to 150 STG www.pingjingsemi.com 1 / 4 Revison 1.0 July-2018 MMBTSC1623 NPN Transistor Electrical Characteristics Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Min. Typ. Max. Unit DC Current Gain 90 - 180 at VCE = 6 V, IC = 1 mA Current Gain Group L4 135 - 270 H L5 FE - 200... See More ⇒

 

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 mmbtsc1623-l4 mmbtsc1623-l5 mmbtsc1623-l6 mmbtsc1623-l7.pdf Design, MOSFET, Power

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