View mmbtsc945-l mmbtsc945-h detailed specification:
MMBTSC945 NPN Transistor SOT-23 Features (TO-236) Excellent hFE Linearity Low noise 1.Base 2.Emitter 3.Collector Marking CR Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBO Collector Emitter Voltage V 50 V CEO Emitter Base Voltage V 5 V EBO Collector Current I 150 mA C Power Dissipation P 200 mW D Junction Temperature T 150 J Storage Temperature Range T -55 to 150 STG Electrical Characteristics (T =25 ) A Parameter Symbol Min. Max. Unit DC Current Gain 130 200 - at VCE = 6 V, IC = 1 mA Current Gain Group L H FE 200 400 - H Collector Base Cutoff Current I - 100 nA CBO at VCB = 60 V Emitter Base Cutoff Current I - 100 nA EBO at VEB = 5 V Collector Base Breakdown Voltage V 60 - V (BR)CBO ... See More ⇒
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mmbtsc945-l mmbtsc945-h.pdf Design, MOSFET, Power
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