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2SK3228 Silicon N Channel MOS FET High Speed Power Switching REJ03G1094-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS (on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source 1 2 3 S Rev.4.00 May 15, 2006 page 1 of 7 2SK3228 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage VDSS 80 V Gate to source voltage VGSS 20 V Drain current ID 75 A Drain peak current ID (pulse) Note 1 300 A Body-drain diode reverse drain current IDR 75 A Avalanche current IAP Note 3 50 A Avalanche energy EAR Note 3 181 mJ Channel dissipation Pch Note 2 100 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 10 s, du... See More ⇒

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