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View h5n2512fl-m0 detailed specification:

Preliminary Datasheet H5N2512FL-M0 R07DS0997EJ0100 250V - 18A - MOS FET Rev.1.00 High Speed Power Switching Jan 08, 2013 Features Low on-resistance RDS(on) = 0.082 typ. (at ID = 9 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 250 V Gate to source voltage VGSS 30 V Drain current ID 18 A Drain peak current ID (pulse)Note1 72 A Body-drain diode reverse drain current IDR 18 A Body-drain diode reverse drain peak current IDR (pulse)Note1 72 A Avalanche current IAP Note3 18 A Avalanche energy EARNote3 20.2 mJ Channel dissipation Pch Note2 35 W Channel to case thermal imped... See More ⇒

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