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View h5n5004pl-e0-e detailed specification:

Preliminary Datasheet H5N5004PL-E0-E R07DS1198EJ0100 500V - 50A - MOS FET Rev.1.00 High Speed Power Switching Mar 26, 2014 Features Low on-resistance R DS (on) = 0.09 typ. (at ID = 25 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Low gate charge Avalanche ratings Built-in fast recovery diode trr = 190 ns typ Outline RENESAS Package code PRSS0003ZC-A (Package name TO-264) D 1. Gate G 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current ID 50 A Drain peak current ID(pulse) Note1 200 A Body-drain diode reverse drain current IDR 50 A Body-drain diode reverse drain peak current IDR(pulse) Note1 200 A Avalanche current IAP Note3 25 A Channel dissipation Pch Note2 250 W Ch... See More ⇒

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