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View r07ds0494ej rjk5026dpe detailed specification:

Preliminary Datasheet RJK5026DPE R07DS0494EJ0200 (Previous REJ03G1852-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jul 21, 2011 Features Low on-resistance RDS(on) = 1.35 typ. (at ID = 3 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source G 4. Drain 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current ID 6 A Drain peak current ID (pulse)Note1 18 A Body-drain diode reverse drain current IDR 6 A Body-drain diode reverse drain peak current IDR (pulse)Note1 18 A Avalanche current IAPNote3 4 A Avalanche energy EARNote3 0.88 mJ Channel dissipation Pch Note2 62.5 W Channel to case t... See More ⇒

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