View rej03g1360 rjk5015dpkds detailed specification:
Preliminary Datasheet RJK5015DPK REJ03G1360-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2. Drain (Flange) G 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current ID 25 A Drain peak current ID (pulse)Note1 75 A Body-drain diode reverse drain current IDR 25 A Body-drain diode reverse drain peak current IDR (pulse)Note1 75 A Avalanche current IAPNote3 7 A Avalanche energy EARNote3 2.7 mJ Channel dissipation Pch Note2 150 W Channel to case thermal impedance ch-c 0.833 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to... See More ⇒
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rej03g1360 rjk5015dpkds.pdf Design, MOSFET, Power
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