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Preliminary Datasheet RJK5012DPE REJ03G1487-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching May 12, 2010 Features Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source G 4. Drain 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current ID 12 A Drain peak current ID (pulse)Note1 24 A Body-drain diode reverse drain current IDR 12 A Body-drain diode reverse drain peak current IDR (pulse)Note1 24 A Avalanche current IAPNote3 4 A Avalanche energy EARNote3 0.88 mJ Channel dissipation Pch Note2 100 W Channel to case thermal impedance ch-c 1... See More ⇒

 

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