View 2sa2005 detailed specification:
2SA2005 Transistors High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (-160V, -1.5A) 2SA2005 Features External dimensions (Units mm) 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = -160V) 10.0 4.5 3) High fT. (Typ. 150MHz) 3.2 2.8 4) Wide SOA (safe operating area). 5) Complements the 2SC5511. 1.2 1.3 0.8 0.75 2.54 2.54 2.6 (1) Base(Gate) (1) (2) (3) (2) Collector(Drain) Absolute maximum ratings (Ta = 25 C) (1) (2) (3) (3) Emitter(Source) Parameter Symbol Limits Unit ROHM TO-220FN Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -160 V Emitter-base voltage VEBO -5 V Collector current IC -1.5 A 2 W Collector power dissipation PC 20 W (Tc = 25 C) Junction temperature Tj 150 C Storage temperature Tstg -55 +150 C Packaging specifications and hFE Ty... See More ⇒
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2sa2005.pdf Design, MOSFET, Power
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