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ruh40190mruh40190m

RUH40190M N-Channel Advanced Power MOSFET Features Pin Description 40V/190A, DD RDS (ON) =1.7m (Typ.)@VGS=10V D D Uses Ruichips Proprietary New Trench Technology Ultra Low On-Resistance Exceptional dv/dt Capability G S Low Gate Charge Minimize Switching Loss S S 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) PIN1 DFN5060 D Applications DC/DC Converters On board power for servers G Fast charges S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage 20 TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range -55 to 175 C IS Diode Continuous Forward Current TC=25 C 190 A Mounted on Large Heat Sink TC=25 C 560 A IDP 300 s Pulse Drain Current T... See More ⇒

 

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 ruh40190m.pdf Design, MOSFET, Power

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