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View stt03n10 detailed specification:

Green Product STT03N10 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 235 @ VGS=10V Surface Mount Package. 100V 2.5A 300 @ VGS=4.5V D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Units Limit VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TA=25 C A 2.5 a c ID Drain Current-Continuous TA=70 C 2 A c IDM A -Pulsed 16 d EAS mJ Single Pulse Avalanche Energy 9.6 TA=25 C 3 W a PD Maximum Power Dissipation TA=70 C W 1.9 Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 C THERMAL CHARACTERISTICS a R JA Thermal Resistance, Junction-to-Ambient 42 C/W Details are ... See More ⇒

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