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View stu10n25 std10n25 detailed specification:

STU10N25 Green Product STD10N25 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 250V 9A 258 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Symbol Parameter Units Limit VDS Drain-Source Voltage 250 V VGS Gate-Source Voltage 20 V A TC=25 C 9 a e ID Drain Current-Continuous TC=100 C 5.7 A b IDM A -Pulsed 25 d EAS mJ Single Pulse Avalanche Energy 20 TC=25 C W 42 PD Maximum Power Dissipation TC=100 C 17 W Operating Junction and Storage -55 to 150 TJ, TSTG Temperature Range C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case ... See More ⇒

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