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View irf510a detailed specification:

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.6 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.289 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 Continuous Drain Current (TC=25 ) 5.6 ID A Continuous Drain Current (TC=100 ) 4 1 IDM Drain Current-Pulsed A O 20 VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ O 63 1 IAR Avalanche Current 5.6 A O 1 EAR Repetitive Avalanche Energy O 3.3 mJ 3 dv/dt Peak Diode Recovery dv/dt V/ns O 6.5 Total Power Dissipation (TC=25 ) 33 W PD Linear Derating Factor ... See More ⇒

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