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View irf624a detailed specification:

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Low RDS(ON) 0.742 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 250 o Continuous Drain Current (TC=25 C) 4.1 ID A o C Continuous Drain Current (TC=100 ) 2.6 1 IDM Drain Current-Pulsed A O 16 VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ O 84 1 IAR Avalanche Current O 4.1 A EAR Repetitive Avalanche Energy 1 O 4.9 mJ 3 dv/dt Peak Diode Recovery dv/dt V/ns 4.8 O Total Power Dissipation (TC=25 oC) 49 W PD Linear Derating Factor W/ oC 0.39 Operating Junction and TJ... See More ⇒

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