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2sd1886c2sd1886c

Ordering number EN7201 2SD1886C SANYO Semiconductors DATA SHEET www.datasheet4u.com NPN Triple Diffused Planar Silicon Transistor 2SD1886C Color TV Horizontal Deflection Output Applications Features High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 700 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 8 A Collector Current (Pulse) ICP 25 A 3.0 W Collector Dissipation PC Tc=25 C80 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25 C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=800V, IE=0A 10 A Co... See More ⇒

 

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