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Ordering number ENA0361A 2SK2617ALS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK2617ALS Applications Features Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS 30 V IDc*1 Limited only by maximum temperature 5 A Drain Current (DC) IDpack*2 SANYO s ideal heat dissipation condition 4.5 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% 16 A 2.0 W Allowable Power Dissipation PD Tc=25 C (SANYO s ideal heat dissipation condition) 25 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *3 EAS 88 mJ Avalanche Current *4 IAV 4 A *1 Shows chip capability *2 Package limited *3 VDD=5... See More ⇒

 

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