View c945t detailed specification:
C945T NPN Silicon Elektronische Bauelemente Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES Low noise TO-92 Excellent hFE linearity Complementary to A733T MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 V 1 Collector-Emitter Voltage VCEO 50 V 2 3 1 2 3 Emitter-Base Voltage VEBO 5 V Collector Current Continuous IC 150 mA 1. EMITTER 2. COLLECTOR Collector Power Dissipation PC 400 mW 3. BASS Junction, Storage Temperature TJ, TSTG 125, -55 125 C ELECTRICAL CHARACTERISTICS (Tamb = 25 C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Units IC = 1mA, IE = 0 Collector-Base Breakdown Voltage V(BR)CBO 60 V IC = 100 A, IB = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 50 V IE = 100mA, IC = 0 Em... See More ⇒
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c945t.pdf Design, MOSFET, Power
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