View mmdt3906 detailed specification:

mmdt3906mmdt3906

MMDT3906 PNP Silicon Elektronische Bauelemente Multi-Chip Transistor RoHS Compliant Product SOT-363 * Features o .055(1.40) 8 .047(1.20) 0o .026TYP (0.65TYP) .021REF (0.525)REF Power dissipation. O .053(1.35 .096(2.45) PCM 0.2 W (Tamp.=25 C) .045(1.15 .085(2.15) Collector current .018(0.46) .010(0.26) ICM - 0.2 A .014(0.35) .006(0.15) C B E .006(0.15) 2 1 1 .003(0.08) Collector -base voltage .087(2.20) .079(2.00) .004(0.10) .000(0.00) V(BR) CBO - 40 V .043(1.10) .039(1.00) .035(0.90) .035(0.90) Operating & storage junction temperature E B C 2 2 1 O O Tj, Tstg -55 C +150 C Marking K3N or A2 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT V Collector-base breakdown volt... See More ⇒

 

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