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View 2n7002c1a 2n7002c1b detailed specification:

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1 VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VDS Drain Source Voltage 60V VGS Gate Source Voltage 40V ID TC = 25 C Continuous Drain Current 115mA ID TC = 100 C Continuous Drain Current 75mA IDM Pulsed Drain Current (1) 800mA PT TA 25 C Total Power Dissipation at 350mW De-rate TC > 25 C 2.8mW/ C TJ Operating Temperature Range -55 to +150 C Tstg Storage Temperature Range -55 to +150 C THERMAL PROPERTIES Symbols Parameters Max Units R JA Thermal Resistance, Junction To Ambient 357 C/W Notes Notes Notes ... See More ⇒

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