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View hfh18n50s detailed specification:

Nov 2009 BVDSS = 500 V RDS(on) typ = 0.220 HFH18N50S ID = 19 A 500V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 52 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 0.220 (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 500 V ID Drain Current Continuous (TC = 25 ) 19 A Drain Current Continuous (TC = 100 ) 11.4 A IDM Drain Current Pulsed (Note 1) 76 A VGS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 945 mJ IAR Avalanche Current (Note 1) 19 A EAR Repetitive Avalanche Energy (Note 1) 23 mJ dv/dt Peak Diod... See More ⇒

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