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View hfs10n60u detailed specification:

Oct 2013 BVDSS = 600 V RDS(on) typ = 0.67 HFS10N60U ID = 9.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 0.67 GS=10V 100% Avalanche Tested Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 600 V Drain Current Continuous (TC = 25 ) 9.5* A ID Drain Current Continuous (TC = 100 ) 6.0* A IDM Drain Current Pulsed (Note 1) 38* A VGS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 470 mJ IAR Avalanche Current (Note 1) 9.5 A EAR Repetitive Avalanche Energy (Note 1) 5.0 mJ ... See More ⇒

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