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MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 45 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 100 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Temperature Range TS -55 to +150 C . (495) 795-0805 (495) 234-1603 . info@rct.ru www.rct.ru MMBT9015B / MMBT9015C / MMBT9015D O Characteristics at Tamb=25 C Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE=5V, IC=2mA MMBT9015B hFE 125 - 250 - MMBT9015C hFE 220 - 475... See More ⇒

 

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