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View st13007 detailed specification:

ST 13007 NPN Silicon Transistor for high voltage, high-speed power switching application TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Collector Current IC 8 A O Total Power Dissipation (Ta = 25 C) Ptot 2 W O Total Power Dissipation (TC = 25 C) Ptot 80 W O Junction Temperature Tj 150 C O Storage Temperature Range Tstg - 55 to + 150 C O Characteristics at Ta = 25 C Parameter Symbol Min. Max. Unit DC Current Gain hFE 8 40 - at VCE = 5 V, IC = 2 A Collector Base Cutoff Current ICBO - 1 mA at VCB = 700 V Emitter Base Cutoff Current IEBO - 1 mA at VEB = 9 V Collector Base Breakdown Voltage V(BR)CBO 700 - V at IC = 1 mA Collector Emitter Breakdown Voltage V(BR)CEO 400 - V at IC = 10 mA Emitter B... See More ⇒

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