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View sttip42c detailed specification:

ST TIP42C PNP Silicon Epitaxial Planar Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 100 V Collector Base Voltage -VCBO 100 V Collector Emitter Voltage -VCEO 5 V Emitter Base Voltage -VEBO 6 A Collector Current -IC 10 A Collector Current (Pulse) -ICP 2 A Base Current -IB O 2 W Power Dissipation (Ta = 25 C) Ptot O Power Dissipation (Tc = 25 C) Ptot 65 W O Junction Temperature Tj 150 C O Storage Temperature Range Tstg - 65 to + 150 C O Characteristics at Ta = 25 C Parameter Symbol Min. Max. Unit DC Current Gain at -VCE = 4 V, -IC = 0.3 A hFE 30 - - at -VCE = 4 V, -IC = 3 A hFE 15 75 - Collector Emitter Cutoff Current -ICES - 0.4 mA at -VCE = 100 V Collector Emitter Cutoff Current -ICEO - 0.7 mA at -VCE = 60 V Emitter Base Cu... See More ⇒

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