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View buz110s spp80n05 detailed specification:

BUZ 110 S SPP80N05 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175 C operating temperature also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 110 S 55 V 80 A 0.012 TO-220 AB Q67040-S4005-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 80 TC = 100 C 66 Pulsed drain current IDpuls TC = 25 C 320 Avalanche energy, single pulse EAS mJ ID = 80 A, VDD = 25 V, RGS = 25 L = 144 H, Tj = 25 C 460 Avalanche current,limited by Tjmax IAR 80 A Avalanche energy,periodic limited by Tjmax EAR 20 mJ Reverse diode dv/dt dv/dt kV/ s IS = 80 A, VDS = 40 V, diF/dt = 200 A/ s Tjmax = 175 C 6 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 200 Semiconductor Group 1 28/Jan/1998 BUZ 110 S SPP80... See More ⇒

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