All Transistors. Equivalents Search

View ss8550-l ss8550-h ss8550-j detailed specification:

SS8550 TRANSISTOR(PNP) SOT 23 FEATURES High Collector Current Complementary to SS8050 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector Power Dissipation 300 mW C R Thermal Resistance From Junction To Ambient 417 /W JA T Junction Temperature 150 j T Storage Temperature -55 +150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-100 A, I =0 -40 V (BR)CBO C E Collector-emitter breakdown voltage V I =-0.1mA, I =0 -25 V (BR)CEO C B Emitter-base breakdown voltage V(BR)EBO IE=-100 A, IC=0 -5 V Collector... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 ss8550-l ss8550-h ss8550-j.pdf Design, MOSFET, Power

 ss8550-l ss8550-h ss8550-j.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8550-l ss8550-h ss8550-j.pdf Database, Innovation, IC, Electricity