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View bd241cfp detailed specification:

BD241CFP COMPLEMENTARY SILICON POWER TRANSISTOR FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD241CFP is silicon epitaxial-base NPN 3 transistor mounted in TO-220FP fully molded 2 1 isolated package. It is inteded for power linear and switching TO-220FP applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCER Collector-Base Voltage (RBE = 100 ) 115 V V Collector-Emitter Voltage (I = 0) 100 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 3 A C ICM Collector Peak Current 5 A IB Base Current 1 A o P Total Dissipation at T 25 C15 W tot c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative... See More ⇒

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