View mje13009 detailed specification:
MJE13009 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-Emitter Voltage (IB = 0) 400 V V Collector-Emitter Voltage (V = -1.5 V) 700 V CEV BE V Emitter-Base Voltage (I = 0) 9 V EBO C IC Collector Current 12 A ICM Collector Peak Current (tp 10 ms) 24 A I Base Current 6 A B I Base Peak Current (t 10 ms) 12 A BM p I Emitter Current 18 A E IEM Emitter Peak Current 36 A o Ptot Total Power Dissipation at Tc 25 C 100 W o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/6 September 1997 ... See More ⇒
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