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View stb13n60m2 std13n60m2 detailed specification:

STB13N60M2, STD13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in D2PAK and DPAK packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STB13N60M2 TAB 650 V 0.38 11 A STD13N60M2 TAB 3 3 Extremely low gate charge 1 1 Lower RDS(on) x area vs previous generation DPAK D2PAK Low gate input resistance 100% avalanche tested Zener-protected Applications Figure 1. Internal schematic diagram , TAB Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh technology MDmesh II Plus low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demandin... See More ⇒

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