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STL10N60M2 N-channel 600 V, 0.580 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features VDS @ Order code TJmax RDS(on) max ID STL10N60M2 650 V 0.660 5.5 A Extremely low gate charge 1 2 3 Lower RDS(on) x area vs previous generation 4 Low gate input resistance PowerFLAT 5x6 HV 100% avalanche tested Zener-protected Applications Figure 1. Internal schematic diagram Switching applications D(5, 6, 7, 8) 8 7 6 5 Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh G(4) technology MDmesh II Plus low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and 1 2 3 4 gate charge. It is therefore suitable for the mos... See More ⇒

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