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CSD16408Q5 www.ti.com SLPS228A OCTOBER 2009 REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFET 1 FEATURES PRODUCT SUMMARY 2 Ultralow Qg and Qgd VDS Drain-to-source voltage 25 V Low Thermal Resistance Qg Gate charge, total (4.5 V) 6.7 nC Avalanche Rated Qgd Gate charge, gate-to-drain 1.9 nC SON 5-mm 6-mm Plastic Package VGS = 4.5 V 5.4 m rDS(on) Drain-to-source on-resistance VGS = 10 V 3.6 m APPLICATIONS VGS(th) Threshold voltage 1.8 V Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems ORDERING INFORMATION Optimized for Control FET Applications Device Package Media Qty Ship SON 5-mm 6-mm 13-inch Tape and CSD16408Q5 plastic package (33-cm) 2500 reel DESCRIPTION reel The NexFET power MOSFET has been designed to minimize losses in power conversion applications. ABSOLUTE MAXIMUM RATING... See More ⇒

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