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2sa10912sa1091

2SA1091 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1091 High Voltage Control Applications Unit mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage VCBO = -300 V, VCEO = -300 V Low saturation voltage VCE (sat) = -0.5 V (max) Small collector output capacitance Cob = 6 pF (typ.) Complementary to 2SC2551. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -300 V Collector-emitter voltage VCEO -300 V Emitter-base voltage VEBO -8 V Collector current IC -100 mA Base current IB -20 mA JEDEC TO-92 Collector power dissipation PC 400 mW JEITA SC-43 Junction temperature Tj 150 C TOSHIBA 2-5F1B Storage temperature range Tstg -55 150 C Weight 0.21 g (typ.) Note Using continuously under heavy loads (e.g... See More ⇒

 

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