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2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD1658 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Zener diode included between collector and base. Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 10 V Collector-emitter voltage VCEO 60 10 V Emitter-base voltage VEBO 8 V Collector current IC 2 A Base current IB 0.5 A JEDEC Ta = 25 C 1.5 Collector power PC W dissipation JEITA Tc = 25 C 10 TOSHIBA 2-8H1A Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C Weight 0.82 g (typ.) Equivalent Circuit COLLECTOR... See More ⇒

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