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2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Unit mm Motor Drive Applications Low drain-source ON-resistance RDS (ON) = 1.4 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 800 V) Enhancement-model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 1000 V Drain-gate voltage (RGS = 20 k ) VDGR 1000 V Gate-source voltage VGSS 30 V 1. GATE DC (Note 1) ID 8 2. DRAIN (HEAT SINK) Drain current A Pulse (Note 1) IDP 24 3. SOURSE Drain power dissipation (Tc = 25 C) PD 150 W JEDEC Single pulse avalanche energy EAS 910 mJ JEITA (Note 2) TOSHIBA 2-16C1B Avalanche... See More ⇒

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