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2SK2615 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2615 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.23 (typ.) High forward transfer admittance Yfs = 2.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement mode Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k ) VDGR 60 V Gate-source voltage VGSS 20 V DC (Note 1) ID 2 Drain current A Pulse (Note 1) IDP 6 Drain power dissipation PD 0.5 W JEDEC Drain power dissipation (Note 2) PD 1.5 W JEITA Channel temperature Tch 150 C TOSHIBA 2-5K1B Storage temperature range Tstg -55 to 150 C Weight 0.05 g (typ.) Note 1 En... See More ⇒

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