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2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching Regulator Applications, DC-DC Converter and Unit mm Motor Drive Applications 4 V gate drive Low drain-source ON resistance R = 13.5 m (typ.) DS (ON) High forward transfer admittance Y = 42 S (typ.) fs Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement-model V = 1.3 2.5 V (V = 10 V, I = 1 mA) th DS D Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS 20 k ) VDGR 60 V Gate-source voltage VGSS 20 V DC (Note 1) ID 35 Drain current A Pulse (Note 1) IDP 105 JEDEC Drain power dissipation (Tc 25 C) PD 30 W JEITA SC-67 Single pulse avalanche energy EAS 68 mJ (Note 2) TOSHIBA 2-10R1B Avalanche current IAR 35 A Weight 1.9 g (... See More ⇒

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