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2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3567 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.7 (typ.) High forward transfer admittance Yfs = 2.5S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k ) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 3.5 1 Gate Drain current A 2 Drain Pulse (t = 1 ms) IDP 14 3 Source (Note 1) Drain power dissipation (Tc = 25 C) PD 35 W Single pulse avalanche energy EAS 201 mJ JEDEC (Note 2) JEITA SC-67 Avalanche current IAR 3.5 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ TOSHIBA 2-10U1... See More ⇒

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