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2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( - MOSIV) 2SK3878 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Yfs = 7.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k ) VDGR 900 V Gate-source voltage VGSS 30 V 1. GATE DC (Note 1) ID 9 2. DRAIN (HEATSINK) Drain current A 3. SOURCE Pulse (Note 1) IDP 27 Drain power dissipation (Tc = 25 C) PD 150 W JEDEC Single pulse avalanche energy EAS 778 mJ (Note 2) JEITA SC-65 Avalanche current IAR 9 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note... See More ⇒

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