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GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Unit mm Fast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS) Operating frequency up to 50 kHz (reference) High speed tf = 0.05 s (typ.) Low switching loss Eon = 1.30 mJ (typ.) Eoff = 1.34 mJ (typ.) Low saturation Voltage VCE (sat) = 2.0 V (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES 20 V DC IC 50 JEDEC Collector current A 1 ms ICP 100 JEITA Collector power dissipation PC 240 W (Tc = 25 C) TOSHIBA 2-21F2C Junction temperature Tj 150 C Weight 9.75 g Storage temperature range Tstg -55 to 150 C Note Using continuously under heavy loads (e.g. ... See More ⇒

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