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View gt50j301 detailed specification:

GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS Unit mm MOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed tf = 0.30 s (Max.) Low saturation voltage VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate-Emitter Voltage VGES 20 V DC IC 50 Collector Current A 1ms ICP 100 DC IF 50 JEDEC Forward Current A 1ms IFM 100 JEITA Collector Power Dissipation TOSHIBA 2-21F2C PC 200 W (Tc = 25 C) Weight 9.75 g (typ.) Junction Temperature Tj 150 C Storage Temperature Tstg -55 150 C Screw Torque 0.8 N m Note Using continuously under heavy loads (e.g. the application of high temperature/cur... See More ⇒

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