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GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Unit mm Fast Switching Applications Fourth generation IGBT Enhancement mode type Fast switching (FS) Operating frequency up to 50 kHz (reference) High speed tf = 0.05 s (typ.) Low switching loss Eon = 1.30 mJ (typ.) Eoff = 1.34 mJ (typ.) Low saturation Voltage VCE (sat) = 2.0 V (typ.) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES 20 V DC IC 50 Collector current A 1 ms ICP 100 JEDEC DC IF 50 Emitter-collector forward JEITA A current 1 ms IFM 100 TOSHIBA 2-21F2C Collector power dissipation PC 240 W (Tc = 25 C) Weight 9.75 g Junction tempe... See More ⇒

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