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GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Unit mm Fourth Generation IGBT Enhancement mode type High speed tf = 0.1 s (Typ.) Low saturation voltage VCE (sat) = 2.0 V (Typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES 25 V DC IC 50 Continuous collector current A 1ms ICP 120 DC IF 30 Diode forward current A 1ms IFP 120 Collector power dissipation PC 140 W (Tc = 25 C) Junction temperature Tj 150 C JEDEC Storage temperature range Tstg -55 to 150 C JEITA Note Using continuously under heavy loads (e.g. the application of TOSHIBA 2-16C1C high temperature/current/voltage and the significant change in temperature, etc.) may cause thi... See More ⇒

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